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IPP80N08S2L07AKSA1 Datasheet
Datasheet specifications
| Datasheet's name | IPP80N08S2L-07 |
|---|---|
| File size | 64.812 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet IPP80N08S2L-07 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPP80N08S2L07AKSA1
- Power Dissipation (Pd): 300W
- Drain Source Voltage (Vdss): 75V
- Continuous Drain Current (Id): 80A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.1mΩ@10V,80A
- Package: TO-220
- Manufacturer: Infineon Technologies
